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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD820 DESCRIPTION With TO-3 package High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1500 600 5 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25ae 5 -5 50 150 -65~150 UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SD820 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 600 V VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.8 A 3.0 5.0 V VBEsat Base-emitter saturation voltage IC=4 A;IB=0.8 A 1.5 V ICBO Collector cut-off current VCB=500V;IE=0 10 |I A IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V 8 20 COB fT tf TOR NDU ICO E SEM ANG INCH Output capacitance IE=0; VCB=10V;f=1MHz 165 Transition frequency IC=0.1A ; VCE=10V 3 Fall time ICP=4A ;IB1=0.8A 0.5 1.0 pF MHz |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD820 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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